Inhwan Kim, Ph.D., applies his broad technical expertise to translate inventors' ideas into patent applications across quantum physics, materials science, and semiconductor technologies.
During his doctoral studies in physics at The University of Texas at Austin, Inhwan investigated the electronic, optical, and dielectric properties of oxide materials for applications in Si-integrated photonics. His research addressed ferroelectricity, electro-optic response, optical losses, dielectric phenomena, and metal-semiconductor interfaces using ab initio density functional theory, finite-difference time-domain simulations, and high-performance computing resources at the Texas Advanced Computing Center.
He also has hands-on experimental experience with two-dimensional transition metal dichalcogenides grown by chemical vapor deposition and high-critical-temperature superconductors synthesized using solid-state reaction techniques.
Inhwan’s scientific research has been published in Nature Chemistry, Matter, Physical Review B, Physical Review Materials, and Journal of Applied Physics.
In his free time, Inhwan enjoys exploring the city, reading, playing poker, and training for half marathons.