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Laura Ruppalt, Ph.D.

Technology Specialist

Washington, D.C.
202-220-6827
ruppalt@fr.com
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Laura Ruppalt, Ph.D. Photo

Background

Laura Ruppalt is a Technology Specialist in the Washington, DC office of Fish & Richardson. Dr. Ruppalt’s practice supports patent preparation and prosecution in the area of electrical and computer technologies.  Prior to joining the firm, Dr. Ruppalt worked as a research engineer at the U.S. Naval Research Laboratory and the Johns Hopkins University Applied Physics Laboratory, where she developed and evaluated material, device, and system technologies for defense applications.

Education

Ph.D., University of Illinois at Urbana-Champaign 2007
Electrical and Computer Engineering
PhD. Dissertation: “Integration of Single-Walled Carbon Nanotubes with III-V(110) Surfaces: A Scanning Tunneling Microscopy Study” under Professor J.W. Lyding


M.S., University of Illinois at Urbana-Champaign 2004
Electrical and Computer Engineering


B.S.E., Princeton University 2002
Electrical Engineering
highest honors

Memberships & Affiliations

Institute of Electrical and Electronics Engineers (IEEE)

Other Distinctions

Selected Publications

L.B. Ruppalt and J.G. Champlain, “Phase Change Materials for RF Reconfigurability,” ONR Future Force Magazine, Fall 2015 Issue, pp.10-13.

L.B. Ruppalt, E.R. Cleveland, J.G. Champlain, B.R. Bennett, and S.M. Prokes, “Integration of Atomic Layer Deposited High-k Dielectrics on GaSb via Hydrogen Plasma Exposure,” AIP Advances, 4, 127153 (2014).

L.B. Ruppalt, E.R. Cleveland, J.G. Champlain, D. Park, S.M. Prokes, J.B. Boos, B.R. Bennett, “Atomic Layer Deposition of Al2O3 on GaSb using In-Situ Hydrogen Plasma Exposure,” Applied Physics Letters, 101, 231601 (2012).

L.B. Ruppalt, D.R. McKinstry, K.C. Lauritzen, A.K. Wu, S.A. Phillips, and S.H. Talisa, “Simultaneous Digital Measurement of Phase and Amplitude Noise,” Proceedings of the 2010 IEEE International Frequency Control Symposium, 1-4 June 2010, pp. 97-102.

L.B. Ruppalt and J.W. Lyding, “Charge transfer between semiconducting carbon nanotubes and their doped GaAs(110) and InAs(110) substrates detected by scanning tunneling spectroscopy,” Nanotechnology, 18, 215202 (2007).

L.B. Ruppalt and J.W. Lyding, “Metal-induced gap states at a carbon nanotube intramolecular heterojunction observed by scanning tunneling microscopy,” Small, 3, 280-284 (2007).

L.B. Ruppalt, P.M. Albrecht, and J.W. Lyding, “Atomic resolution scanning tunneling microscope study of single-walled carbon nanotubes on GaAs(110),” J. Vac. Sci. Technol. B. 22, 2005-2007 (2004).

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